SANN Optoelectronics Co., Ltd. is the "National High-Tech Industrialization Demonstration Project" approved by the National Development and Reform Commission (NDRC), "Leading Enterprise of Semiconductor Lighting Project" recognized by the Ministry of Science and Technology (MOST) and the Ministry of Information Industry (MIIT), and "Strategic Partner" confirmed by the Ministry of Aeronautics and Astronautics (MAA). "Strategic Partner" recognized by the Ministry of Aeronautics and Astronautics. Founded in November 2000, located in the beautiful heron island of Xiamen, is the current domestic full-color ultra-high brightness LED epitaxial and wafer industrialization production base.

Basic Introduction Chinese Name ：Sanan Optoelectronics Foreign Name ：Sanan optoelectronics Pinyin ：sān ān guāng diàn Region ：Xiamen Company Profile,Listing Information,Spirit of the Company,Products,Corporate Culture,Sanan Corporate Culture,Sanan Spirit,Values,Business Philosophy,Service Objectives,Quality Guidelines,Corporate Mission,Corporate Vision,Enterprise Talent, Recruitment Slogan, Training Slogan, Honor, Milestones, Leading Technology, Move Back to Xiamen, Company Profile SANAN Optoelectronics Co., Ltd. has undertaken the national "863" major projects, has a national post-doctoral research station and a national enterprise technology center. The company is located in the north side of Xiamen International Convention and Exhibition Center, covers an area of 50,000 square meters, is a modern garden factory. The company is mainly engaged in the research, development, production and sales of full-color ultra-brightness LED epitaxial wafer, wafer, compound solar cell, PIN photodetector wafer, etc., and the performance index of the products ranks the international advanced level. The company takes the responsibility of building a national high-tech enterprise with independent intellectual property rights and the vision of creating an international first-class enterprise. The company owns modernized clean plant of class 1000 to class 10000, more than one thousand sets of the most advanced LED epitaxial growth and wafer manufacturing equipments both at home and abroad, and the total number of MOCVDs will be more than 100 when the expansion of the third phase of Tianjin San'an is completed, the scale of which is the first one in the country and the top ten in the world. The company has realized the annual production scale of 650,000 epitaxial wafers and 20 billion wafers. The company has a high-quality team of experts from the United States, Taiwan, Japan and domestic optoelectronic technology top talent. The company has applied for and obtained more than 60 invention patents and proprietary technologies. The company strictly in accordance with the international quality management system and the international environmental management system standards for full staff, all-round, whole process operation, and in 2003 passed the ISO9001: 2000 quality system certification, in 2008 passed the ISO14001: 2004 environmental management system certification, planning to pass the ISO/TS16949 automotive industry production and related service parts quality management system audit in 2009. In 2009, we plan to pass the ISO/TS16949 quality management system audit for production parts and related service parts in the automobile industry. Company Name: Sanan Optoelectronics Co., Ltd English Name: Sanan Optoelectronics Co., Ltd Stock Abbreviation: Sanan Optoelectronics Stock Code: 600703 Legal Representative: Lin Xiucheng SFC Industry Classification: Electronics Stock Type: Shanghai A-share Listed Date: 1996-05-28 Spirit of Enterprise Sanan Optoelectronics adheres to the principle of "integrity and unity, pioneering and innovative," and is committed to the development of the company's business. SANAN Optoelectronics upholds the enterprise spirit of "integrity and unity, innovation, overcoming obstacles to win, and scaling new heights", and the business philosophy of "pragmatism, innovation, customer first, and service first". As a national high-tech industrialization demonstration project and a post-doctoral research station approved by the Ministry of Personnel of the State, SANO has the world's most advanced instruments and equipment and high-standard production environment, and has gathered a number of first-class domestic and foreign experts in LED production technology. We have a high-quality R&D team composed of top talents from the U.S., Japan, Taiwan and domestic optoelectronic technology, and our R&D capability is one of the top in China. Up to now, we have applied for and obtained 33 invention patents and proprietary technologies. Sanan Photoelectric adhere to the quality of survival, innovation and development, the courage to open up, continuous innovation. The pace of product upgrading follows the international trend, and a number of technologies with independent intellectual property rights have filled the gaps in the country. The company's products mainly include full-color ultra-brightness LED epitaxial wafers, wafers, PIN photodetector wafers, compound solar cells and so on. All performance indexes are ranked first in China and advanced in the world. After several years of continuous expansion and improvement, SANON has established a mature marketing system, the marketing team is well-trained and competent, the marketing network spreads all over the world, and the products are exported to many countries and regions, and have been praised by both domestic and foreign customers. The sales performance is increasing at an average annual growth rate of 40%. Products The company is mainly engaged in the research, development, production and sales of full-color ultra-brightness LED epitaxial wafers, wafers, compound solar cells, PIN photodetector wafers and so on. The company has a high-quality team of experts from the United States, Taiwan, Japan and domestic optoelectronic technology top talent, has applied for and obtained 48 invention patents and know-how, product performance indicators ranked the international advanced level. Ultra-high brightness LED is a new generation of energy-saving lighting products, with high energy efficiency, long life, green (energy efficient: power consumption is incandescent 1/10, fluorescent lamps 1/2; long life: 100,000 hours; green: no radiation, does not contain lead, mercury and other hazardous elements) three major advantages of a wide range of sets of landscape lighting, backlighting, automotive lamps, traffic signals, advertising billboards, indoor and outdoor full-color Display screen and other fields. Semiconductor technology breeds a new industrial revolution - the new light source revolution. Its symbol is the semiconductor lamp will gradually replace incandescent and fluorescent lamps. According to the domestic professional consulting organization statistics forecast: 2006 China's LED output value of 14 billion yuan, with the rapid development of the domestic LED industry, is expected to 2008 China's LED set of market size will reach 54 billion yuan, to 2010 will exceed 100 billion yuan. Corporate Culture SANAN Corporate Culture SANAN corporate culture is the culture formed in the long-term development of SANAN, is the source of strength for the growth of the enterprise, is the soil for the success of the enterprise. Only by integrating the culture into the enterprise, shaping the corporate image, and shining the spirit of the enterprise, can the enterprise have a brilliant future. Sanan Spirit Dare to be first, hard work and dedication. Values People-oriented, scientific and technological innovation, the pursuit of excellence, harmony **** win Business Philosophy People have what they do not have, people have what they do, the pursuit of excellence, the foundations of the evergreen Service Tenet Integrity and efficiency, customer first, service first Quality Policy Quality first, customer satisfaction, high quality and stability, and continuous improvement Mission To make the earth more environmentally friendly, and to make mankind healthier Vision To lead the "core" trend, dedication to new energy sources "Talent Concept: Cultivate talents in an eclectic manner, develop talents in a comprehensive manner, gather internal strengths to support good talents, and utilize talents in a people-oriented manner. Recruitment slogan Promote my development, help you grow! Training slogan Your growth depends on your input! Honors In 2003, the company was listed in the National Semiconductor Lighting Project by the Ministry of Science and Technology of the People's Republic of China as a leading enterprise; In 2003, the company was recognized as a "strategic partner" by the Ministry of Aeronautics and Astronautics; In 2004, the company's technology center was recognized as a provincial-level enterprise technology center; In 2004, the company was selected as the chairman of Xiamen Optoelectronics Industry Association. In 2004, the company was elected as the vice chairman of China Optoelectronic Device Association; In 2004, the company was elected as the executive director of National Semiconductor Lighting Engineering R&D and Industry Alliance; In 2006, the company was formally approved by the Ministry of Personnel to set up a post-doctoral scientific research station to carry out post-doctoral scientific research; In 2007, the company was recognized by the National Development and Reform Commission as a unit of the "National High-technology Industry Demonstration Project". In 2007, the company was recognized by the National Development and Reform Commission as a unit of "National High-Tech Industry Demonstration Project"; In 2008, the company was elected as the president of Fujian Optoelectronics Industry Association; In 2008, the company's technology center was recognized as a national enterprise technology center; In 2009, the company was recognized as Xiamen City Intellectual Property Rights Demonstration Unit; In 2009, the company was named as a national model unit for attracting intellectual property. Events June 2011 "China LED Industry Annual Awards (2010)" selection activities by the China Electronic News Agency, China Optical Association LED device branch, China Optical Association LED display set of branches, etc. *** together with the organization, the scope covers all the LED epitaxial, wafer, encapsulation devices, set of engineering and other industrial areas. With the leading level of innovation, strong technical force, rapid development speed and good performance in 2010, Sanan Optoelectronics was honored with "2010 China's LED industry's most growth-oriented enterprise award". In April 2011, the company's project of "Ultra-high brightness LED wafer for TFT-LCD backlighting" won the first prize of 2010 Xiamen Science and Technology Progress Award, and the product of the project, "S-23ABMUP series LED wafer for backlighting" won the first prize of 2010 Xiamen Science and Technology Progress Award. At the same time, the project product "S-23ABMUP series LED chips for backlighting" won the first prize of 2010 Xiamen Excellent New Product Award. In order to further accelerate the brand building of Sanan Optoelectronics and improve the influence of the company, Sanan Optoelectronics was invited by Xiamen City ***, Xiamen Municipal Bureau of Trade and Development, and Xiamen Municipal Federation of Commerce to participate in the 7th China-East Expo from October 19th to October 24th. On September 27, 2010, 2010 SANO new product promotion and press conference was successfully held in Shenzhen Kempinski Hotel. The promotion received wide attention within the industry, *** more than 120 customer representatives came to participate. January 2010: Anhui Sanan Optoelectronics Co. November 2009: The company's "RS-B1 ultra-high brightness power red light-emitting diode wafer" passed the expert appraisal of new products, which was recognized as the first of its kind in China, and the main performance of the product reached the international level. November 2009: Our "Development and Industrialization of Semiconductor Lighting High Brightness Power White Light Emitting Diode Wafers" project won the Second Prize of Xiamen Science and Technology Award. November 13, 2009: Our power red wafers passed the new product identification. September 2009: Our company was awarded TS16949:2002 certification registration. August 2009: The project of "R&D and industrialization of semiconductor lighting devices" undertaken by our company was listed as a key project supported by the Ministry of Information Industry in 2009 Information Industry Development Fund. March 2009: The 2006 National Development and Reform Commission enterprise technology progress and industrial upgrading special project "power semiconductor full-color wafer industrialization" passed the acceptance. February 12, 2009: Our main product "S-RGB07 full-color ultra-high brightness LED chip" won the first prize of excellent new products in Fujian Province. December 2008: Tianjin Sanan Optoelectronics Co. December 8, 2008: The project "Industrialization of Ultra-high Brightness LED Wafers for TFT-LED Backlighting" undertaken by our company was listed in the fourth batch of high-tech industrial development projects in 2008 by the National Development and Reform Commission of the People's Republic of China (NDRC). November 2008: The project of "R&D and industrialization of ultra-high brightness semiconductor red light-emitting diode (LED) wafers for LCD backlighting" was listed by the Ministry of Information Industry as one of the key projects supported by the 2008 Information Industry Development Fund. October 2008: the company's technology center was awarded the title of "national enterprise technology center". August 2008: Awarded ISO14001:2004 Environmental Management System Certificate. July 2008: The company was successfully listed on the domestic A-share market. January 2008: Our company was awarded the honorary title of "Xiamen Top Ten Industrial Enterprises in 2007" by Xiamen City People ***. November 2007: Our "S--RGB07 full-color ultra-high brightness (red, orange, yellow, blue, green) LED chip" products through the Xiamen City, organized by the Economic and Development Bureau of new products, new technologies, expert appraisal, the appraisal concluded that our "substrate transfer of red power LED" product is the first of its kind in China. The appraisal conclusion recognized our "substrate transfer red power LED" as the first product in China, filling the gaps in the country. October 2007: Our company was awarded the title of "National High-tech Industrialization Demonstration Project" by the National Development and Reform Commission. March 2007: Dr. Kazuhiro Okawa, a Japanese scholar, was appointed as our technical consultant. December 2006: The project of "100lm/W power white LED manufacturing technology" undertaken by our company was recognized by the Ministry of Science and Technology of the People's Republic of China as a subject of the National High-tech Research and Development Program (863 Program). November 2006: The project of "Industrialization of power semiconductor full-color wafer" undertaken by the company was listed by the National Development and Reform Commission in the "National 2006 Special Project for Technological Progress and Industrial Upgrading of Enterprises in the Information Industry". July 2006: The project of "Power High Brightness LED Wafer and Flip-flop Technology" passed the appraisal of experts, and the appraisal result was: the industrialized technical indexes reached the domestic leading level. May 2006: the company was formally approved by the Ministry of Personnel to set up a postdoctoral research station to carry out postdoctoral research work. April 2006: the project of "development and industrialization of GaN-based light-emitting diode epitaxial wafer and chip" passed the expert appraisal. The appraisal result is: the industrialization scale is the largest in China, the quality is stable and reliable, and the technical indexes are leading in China. December 2005: The "Tenth Five-Year" National Science and Technology Tackling Plan Project "Industrialization Technology Development of Semiconductor Lighting" passed the expert acceptance organized by the Ministry of Science and Technology of the People's Republic of China. November 2005: The "Gallium Nitride-based Light Emitting Diode Epitaxial Wafer and Device Preparation" project was recognized as Xiamen High-tech Achievement Transformation Project. June 2005: The project of "Development and industrialization of high brightness power white light diode wafer for semiconductor lighting" was listed in the 2005 National Torch Project by the Ministry of Science and Technology of the People's Republic of China. March 2005: "Development and Industrialization of Semiconductor Lighting High Brightness Power White Light Diode Wafers" was listed as one of the top ten key investment projects in 2005 in Fujian Province. November 2004: "Semiconductor Lighting High Brightness Power White Light Diode Wafer Development and Industrialization" was listed as one of the key projects supported by the Ministry of Information Industry of the People's Republic of China (MII) in the 2005 Information Industry Fund. September 2004: The company was honored as the vice president of China Optoelectronic Device Association. August 2004: The company's technology center was awarded the title of "Provincial Enterprise Technology Center" by Fujian Provincial Economic and Trade Commission. August 2004: Multi-junction compound solar cell passed the test and use of Shanghai Space Power Research Institute of China Aviation Science and Technology Corporation, filling the blank in China. February 2004: The company was recognized as a key high-tech enterprise in Xiamen. October 2003: The National Semiconductor Lighting Industry Alliance awarded the company the title of "Leading Enterprise of Semiconductor Lighting Project". October 2003: In the 14th National Invention Exhibition, "A Method of Making Gallium Nitride Luminescent Diode Wafer N Electrode" and "A Luminescent Diode Epitaxial Structure" won the Silver and Bronze Invention Prizes respectively. September 2003: The company developed LED wafers with independent intellectual property rights in China, breaking the history of relying on imported LED wafers in the past. September 2003: the company's technology center was awarded the title of "municipal enterprise technology center". April 2003: The project of "Gallium Nitride-based Light Emitting Diode Epitaxial Wafers and Device Preparation" undertaken by the company was listed in the National Development and Reform Commission's 2003 Demonstration Project of High-technology Industrialization of Optoelectronics and New Components. February, 2003: the company was awarded ISO9001:2000 Quality Management System Certificate. January 2003: the company passed the appraisal of scientific and technological achievements of full-color ultra-brightness LED wafers, and became the first manufacturer in China to realize full-color ultra-brightness light-emitting diode wafers. September 2002: the company's first epitaxial wafer was successfully launched. December 2000: The company was recognized as a high-tech enterprise in Xiamen. Three Ann photoelectric 4 billion project construction process March 15, 2013, three Ann photoelectric announcement, decided to terminate the company's public issuance of A-share stock program. The announcement said, due to changes in the market environment, combined with the company's situation, by the company and the sponsor Ping An Securities discussion, decided to terminate the company's current public issuance of A shares program, and to the Securities and Futures Commission to apply for the withdrawal of the company's current public issuance of A shares program application file. But in the announcement, three Ann photoelectric did not mention the specific content of the issuance program, not to mention the fund-raising plan investment projects. Data show that on May 6, 2011, three Ann photoelectric announced a public issue of not more than 21,000,000 A shares of the program, to raise funds totaling no more than 8 billion yuan (including issuance costs), all for the Anhui three Ann photoelectric Co., Ltd. Wuhu photovoltaic industrialization (Phase II) project and Anhui three Ann photoelectric Co., Ltd. LED sets of products industrialization project, the two projects a total of total investment of about 9.125 billion yuan. Wuhu second phase of 5 billion yuan. Three months later, three Ann photoelectric re-announcement that, according to the securities regulatory authorities to review feedback, the amount of the above down to a total of not more than 6.3 billion yuan, to be invested in the Wuhu phase II of the fund-raising also shrunk to 4 billion yuan, despite this, the issuance of the program has not been substantial progress. Expansion effect is yet to be tested by the market than two years ago, three Ann photoelectric in the LED upstream industry more and more surplus, profit decline. Some industry insiders speculate, three Ann photoelectric initiative to give up the issuance of fund-raising, slow down the new project on the initiative, may have this consideration. But Wang Qing in an interview denied the above speculation, he said the market there is still a lot of space. But Wuhu phase II of the stranded on the company will have what impact, Wang Qing did not give a positive answer, said the company's performance will be reflected in the financial report. According to three Ann photoelectric 2012 annual report, the company realized revenue of 3.363 billion yuan in 2012, compared with the previous year, a year-on-year surge of 92.48%; net profit of 810 million yuan, compared with the previous year, a year-on-year decline of 13.47%. In addition, its main business LED gross profit margin of 25.31%, down 14.36%. According to its annual report, anhui three an photoelectric co., ltd wuhu photoelectric industrialization (a) project (hereinafter referred to as wuhu a) the purchase of mocvd equipment has been put into production, although gained a certain economic benefits, but due to the majority of the equipment in 2012 gradually put into operation, to reach the full production is still a process, to be fully released, the scale effect give full play to the company's performance will be gradually embodied. In the first quarter of 2013, three Ann photoelectric net profit fell 18.77% year-on-year. Zhao Fei said, three Ann photoelectric in the field of domestic LED epitaxial wafer is quite strong, but when the overcapacity appeared, blind expansion fear hidden risk. The aforementioned industry sources said, wuhu a gradually released production capacity of the future three Ann photoelectric performance contribution will further increase, in the taste of sweet, three Ann photoelectric on wuhu two desire is reasonable. Leading technology The company has a team of high-quality experts from the United States, Taiwan, Japan and domestic optoelectronic technology top talent. The company has applied for and obtained 54 invention patents and proprietary technologies, undertaken the national "863" major projects, has a national postdoctoral research station and a national enterprise technology center. In January 2003, the company passed the appraisal of the scientific and technological achievements of the full-color ultra-brightness LED wafer, and the appraisal concluded that: the hardware level of the project is first-class in China, equivalent to the international contemporary level; the industrialization level of the project is at the highest level in China and is close to the international advanced level; the main technical indexes of the product are the leading ones in China; in particular, the success of the development of the ultra-brightness green LED epitaxial wafer and the industrialization of the wafer are to fill the gaps in the domestic market. It was evaluated as the first domestic manufacturer to realize the industrialization of the project, and the quality of the products is stable and reliable. 2. In April 2003, the company's "Gallium Nitride-based Light Emitting Diode Epitaxial Wafers and Devices Preparation Project" was included in the National Development and Reform Commission in the 2003 Optoelectronics, New Components Special High-Tech Industrial Demonstration Project. 3. In June 2003, the project of "high brightness blue LED products and application" was included in the 2003 Electronic Information Industry Development Fund Project of the Ministry of Information Industry; 4. In March 2004, the project of "key technology for industrialization of power-type high brightness light-emitting diode and packaging" was included in the "Key Technology for Industrialization of High Brightness Light-emitting Diode" project. "The project was included in the "Tenth Five-Year" National Science and Technology Tackling Program major projects in the "semiconductor lighting industrialization technology development" project; 5. November 2004 "semiconductor lighting In November 2004, the project of "Development and Industrialization of High Brightness Power White Light Diode Wafers" was listed by the Ministry of Information Industry of the People's Republic of China as one of the key projects supported by the Information Industry Fund in 2005. 6. In November 2006, the project of "Industrialization of Power Semiconductor Full-Color Wafers" undertaken by the company was listed by the National Development and Reform Commission of the People's Republic of China as one of the "National 2006 Information Industry Projects". "The project of "100lm/W power white LED manufacturing technology" was recognized by the Ministry of Science and Technology of the People's Republic of China as a national high-tech research and development program (863 program) in December 2006. Research and Development Program (863 Program); 8. 2007, the Technology Center for the "TFT-LCD backlight for the industrialization of ultra-high brightness LED chip" project was included in the National Development and Reform Commission major industrial science and technology projects; 9. 2008, "LCD backlighting with the 9. 2008 "ultra-high brightness semiconductor red light-emitting diode (LED) wafer research and development and industrialization" project was included in the Ministry of Information Industry in 2008 key bidding projects; 10. 2008 assumed and led by the Municipal Science and Technology Bureau of the city's major scientific and technological projects organized by the joint project "high-efficiency semiconductor lighting key technologies and their application of industrialization ", overcome to achieve power white light emitting efficiency of 80lm / w industrialization of the highest level. 11. 2009 "semiconductor lighting device research and development and industrialization" project was included in the Ministry of Information Industry in 2009 key bidding projects. Moved back to Xiamen 1 billion yuan of cash grants + 3 billion yuan of large single contract, in Xiamen City *** thrown such a tempting "package" in front of the three Ann photoelectric will be planned in Wuhu implementation of photoelectric industrialization (Phase II) project moved back to the company's home base in Xiamen, and will be the total investment in the project from 4.076 billion yuan to 10 billion yuan! . April 4, 2014, three Ann photoelectric board of directors considered and approved the company and the Xiamen Torch Development Zone Management Committee signed the "investment agreement" motion, decided to invest in the development of the development of the construction of LED epitaxial, wafer research and development and manufacturing industrialization project.